UNTUK MEMBINA KEBOLEHAN MENGORGANISASI DAN MEMPAMERKAN HASIL KAJIAN DALAM BENTUK YANG
SISTEMATIK. SELAIN ITU, UNTUK MEMBINA KEBOLEHAN BERFIKIR SECARA KRITIK, ANALITIK SERTA KEBOLEHAN
MENGAPLIKASIKAN PENGETAHUAN YANG DIPEROLEH
SISTEMATIK. SELAIN ITU, UNTUK MEMBINA KEBOLEHAN BERFIKIR SECARA KRITIK, ANALITIK SERTA KEBOLEHAN
MENGAPLIKASIKAN PENGETAHUAN YANG DIPEROLEH
- Lecturer: PROFESOR MADYA DR. LIM WAY FOONG
Skill Level: Beginner
MEMPERKENALKAN PERANTI OPTOELEKTRONIK TERMAJU DAN APLIKASINYA DALAM TEKNOLOGI TERKINI
- Lecturer: PROFESOR MADYA TS. DR. MOHD SYAMSUL NASYRIQ BIN SAMSOL BAHARIN
- Lecturer: TS. DR. MOHD NAZRI BIN ABD RAHMAN
Skill Level: Beginner
Learning Outcome
1. To describe principle of epitaxial growth techniques for semiconductor materials
2. To understand potential and limitation of growth technique for semiconductor materials
3. To justify operation equipment according to standard procedure
4. To review the latest information and new ideas on epitaxial growth technique for semiconductor materials
Introduction to semiconductor materials
• Lattice crystal structure
• Epitaxy, homoepitaxy and heteroepitaxy
• Comparison between latice match and mismatched.
• Type of defects and dislocations
• Epitaxial structure, superlattices, multiquantum wells and staggered layers
Metal organics chemical vapor deposition
• Operational mechanism
• Properties of metalorganics and gasses
• Effect of temperature, growth rate, pressure and V/III ratio on growth efficiency or growth behavior
• Advantages and disadvantages
Molecular beam epitaxy
• Operational mechanism
• Properties of metalorganics and gasses
• Effect of temperature, growth rate, pressure and V/III ratio on growth efficiency or growth behavior
• Advantages and disadvantages
1. To describe principle of epitaxial growth techniques for semiconductor materials
2. To understand potential and limitation of growth technique for semiconductor materials
3. To justify operation equipment according to standard procedure
4. To review the latest information and new ideas on epitaxial growth technique for semiconductor materials
Introduction to semiconductor materials
• Lattice crystal structure
• Epitaxy, homoepitaxy and heteroepitaxy
• Comparison between latice match and mismatched.
• Type of defects and dislocations
• Epitaxial structure, superlattices, multiquantum wells and staggered layers
Metal organics chemical vapor deposition
• Operational mechanism
• Properties of metalorganics and gasses
• Effect of temperature, growth rate, pressure and V/III ratio on growth efficiency or growth behavior
• Advantages and disadvantages
Molecular beam epitaxy
• Operational mechanism
• Properties of metalorganics and gasses
• Effect of temperature, growth rate, pressure and V/III ratio on growth efficiency or growth behavior
• Advantages and disadvantages
- Lecturer: PROFESOR MADYA DR. NORZAINI ZAINAL
Skill Level: Beginner
